Name
Parshina Natalya Valeryevna
Scholastic degree
•
Academic rank
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Honorary rank
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Organization, job position
South Federal University
Web site url
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Articles count: 1
In this article, on the basis of phenomenological
consideration of kinetic processes in semiconductors
volume, we have conducted an analysis, in order to
estimate the drift and diffusion components of the
output current for hot carriers in the total output of
the conductivity structure of the chip. The result
revealed amplitude and frequency characteristics of
this component of the conductivity, illustrating a
greater amount of its modulus and phase inversion
near the field-strength values of Ghan effect. This
can be used for designing oscillators of millimeter
range of wavelengths. It is shown that the nonlinear
diffusion component along with the drift is important
for the output conductance of the test specimen